GIGABYTE today unveiled the M30 line of solid state drives built in the M.2-2280 form-factor, which leverage PCI-Express 3.0 x4 host interface. The drives combine an unknown controller with 256 MB of DDR3L DRAM cache, and 3D TLC NAND flash memory; and comes in capacities of 512 GB and 1 TB. Both these capacity variants have the same amount of DRAM cache. GIGABYTE is using a high-density PCB with 2 oz copper layers, which it claims, can lower controller temperature by up to 15 °C and NAND flash temperature by up to 5 °C.
As for performance, GIGABYTE claims that both capacity variants offer sequential reads of up to 3500 MB/s, and sequential writes of up to 3000 MB/s. The 1 TB variant offers 4K random reads of up to 308,000 IOPS, and random writes of up to 332,000 IOPS; while the 512 GB variant is slightly faster, offering up to 350,000 IOPS 4K random reads, and 302,000 IOPS 4K random writes. The drives are backed by 5-year warranty, the 1 TB variant offers an endurance of 650 TBW, and the 512 GB variant 350 TBW. The company didn’t reveal pricing.